Applied Solid State Science

Contributors to Volume I

Preface

Articles Planned for Future Volumes

Junction Electroluminescence

I. Introduction

II. Energy-Band Description of Electron States in Crystalline Solids

III. Injection Mechanisms for Electroluminescence in p-n Homojunctions

IV. Electroluminescence Injection Processes Involving Heterojunctions

V. Energy Transport and Carrier Capture Mechanisms in Electroluminescent Devices

VI. Excitation Processes Most Suited to the Identification of Recombination Mechanisms in Semiconductors

VII. Radiative and Competing Nonradiative Carrier Recombination Mechanisms in Semiconductors

VIII. Coherent Stimulated Emission (Laser Action) in Semiconductors

IX. "State of the Art" Efficiencies of Electroluminescent Devices

X. Future Prospects

XI. Appendix: A Brief Survey of Very Recent Work

References

Metal-Insulator-Semiconductor (MIS) Physics

I. Introduction

II. Ideal Metal-Insulator-Semiconductor Diode

III. Surface States

IV. Surface-State Measurement Techniques

V. Charges in the Insulator and Their Effect on the Semiconductor Surface

VI. Effects of Metal Work-Function Differences, Crystal Orientation, Temperature, Illumination, and Irradiation on MIS Characteristics

VII. Surface Varactor, Avalanche, Tunneling, and Electroluminescence in MIS Diodes

VIII. Carrier Transport in Insulating Films

References

Ion Implantation in Semiconductors

I. Introduction

II. Ion Range Distributions

III. Lattice Disorder

IV. Lattice Location of Implanted Atoms

V. Electrical Characteristics

VI. Application of Ion Implantation to Device Fabrication

References

Electron Transport through Insulating Thin Films

I. Introduction

II. Theory: Barrier-Limited Mechanisms

III. Theory: Bulk Conduction Phenomena

IV. Experimental Results: Comparison with Theory

References

Author Index

Subject Index