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Elsevier

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization

  • 1st Edition, Volume 45 - April 22, 1997
  • Latest edition
  • Editors: R. K. Willardson, Constantinos Christofides, Gerard Ghibaudo, Eicke R. Weber
  • Language: English

Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC ge… Read more

Description

Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing.

Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.

Key features

  • Provides basic knowledge of ion implantation-induced defects
  • Focuses on physical mechanisms of defect annealing
  • Utilizes electrical and physico-chemical characterization tools for processed semiconductors
  • Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Readership

Researchers, graduate students, and professionals dealing with semiconductors; materials scientists; electrical engineers; engineers and physicists working in microelectronics.

Table of contents

Introduction. H. Ryssel, Ion Implantation into Semiconductors: Historical Perspectives. Implantation and Annealing Processes: Y.-N. Wang and T.-C. Ma, Energetic Stopping Power for Energetic Ions in Solid. S.T. Nakagawa, Solid Effect on the Electronic Stopping and Application to Range Estimation. G. Nuler, S. Kalbitzer, and G.N. Greaves, Ion Implantation into Amorphous Semiconductors. Electrical Characterization: J. Boussey-Said, Sheet and Spreading Resistance Analysis of Ion Implanted and Annealed Semiconductors. M.L. Polignano and G. Queirolo, Stripping Hall Affect Studies. Physico-Chemical Studies: J. Stoemenos, Transmission Electron Microscopy Analysis. M. Servidori and R. Nipoti, Rutherford Back Scattering Studies of Ion Implanted Semiconductors. P. Zaumseil, X-Ray Diffraction Techniques. Subject Index.

Product details

  • Edition: 1
  • Latest edition
  • Volume: 45
  • Published: May 23, 1997
  • Language: English

About the editors

RW

R. K. Willardson

Affiliations and expertise
WILLARDSON CONSULTING SPOKANE, WASHINGTON

CC

Constantinos Christofides

Affiliations and expertise
University of Cyprus

GG

Gerard Ghibaudo

Affiliations and expertise
Labaratoire de Physique des Composants a Semiconducteur

EW

Eicke R. Weber

Affiliations and expertise
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

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