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Ionized-Cluster Beam Deposition and Epitaxy

  • 1st Edition - December 31, 1989
  • Latest edition
  • Author: Toshinori Takagi
  • Language: English

The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented in a… Read more

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Description

The technique of ionized-cluster beam (ICB) deposition, the fundamentals of ICB technology, and technical applications of thin films produced by ICB deposition are presented in a single volume to give a coherent presentation to all those interested or working in the field. ICB processes are well characterized and reliable equipment is available. The films deposited are often superior to those deposited by either evaporation or sputtering, and the range of control of the process exceeds other techniques by a great margin.

Readership

Manufacturers and processors of thin films for multiple uses.

Table of contents

1. Introduction to Ionized-Cluster Beams2. The Ionized-Cluster Beam Deposition System 2.1 Principles of ICB Operation 2.2 ICB Deposition System3. Formation and Characteristics of Clusters 3.1 Nucleation Theory 3.2 Formation of Clusters 3.3 Properties of Clusters4. Film Formation Mechanisms 4.1 Kinetic Energy Range of ICB and Effects of the Kinetic Energy 4.2 Effects of the Ionic Charge 4.3 Film Deposition by Reactive ICB Techniques 4.4 Film Deposition by Simultaneous Use of ICB and Microwave Ion Sources 4.5 Growth Control of ICB Films5. Properties of ICB-Deposited Films 5.1 Metals 5.2 Intermetallic Compounds 5.3 Semiconductors 5.4 Oxide, Nitride, Carbide, and Fluoride Compound Films 5.5 Organic Materials6. ICB and Sputter Deposition 6.1 Ion Beam Sputter Deposition Techniques 6.2 Ion Beam Assisted Deposition7. ConclusionReferencesIndex

Product details

  • Edition: 1
  • Latest edition
  • Published: December 31, 1989
  • Language: English

About the author

TT

Toshinori Takagi

Affiliations and expertise
Ion Engineering Research Institute, Japan