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Elsevier

Materials and Process Characterization

  • 1st Edition, Volume 6 - June 28, 1983
  • Latest edition
  • Editors: Norman G. Einspruch, Graydon B. Larrabee
  • Language: English

VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials… Read more

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Description

VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.

Table of contents


List of Contributors

Preface

Chapter 1 Characterization of Silicon Materials for VLSI

I. Introduction

II. Characterization Techniques

III. Polycrystalline Silicon

IV. Single-Crystal Silicon

V. Slice Preparation

VI. Summary

Appendix. Properties of 54 Elements in Single-Crystal Silicon

References

Chapter 2 Characterization of Silicon Epitaxial Films

I. Introduction

II. Epitaxial-Growth Process

III. Electrical Characterization

IV. Physical and Optical Characterization

V. Epitaxial-Defect Characterization

VI. Epitaxial-Defect Measurements

VII. Summary

References

Chapter 3 Characterization of Dielectric Films

I. Introduction and Background

II. Basic Structure and Properties of Gate Dielectrics

III. The Classification of Dielectric Charges

IV. The Spatial Location of Oxide Charge

V. The Amount and Energy Location of Interface Traps

VI. Temperature Effects on Mobile Ionic Charge

VII. Injected Charge Trapping in Oxide Films

VIII. The Role of Dielectric Layer Characterization in VLSI

References

Chapter 4 The Status of Dry-Developed Resists for Each Lithographic Technology

I. Introduction

II. The Total Dry Process

III. Ablative Resists

IV. Photoresist Analogs

V. X-Ray Resist Analogs

VI. Electron Resist Analogs

VII. Ion-Beam Resist Analogs

VIII. Conclusions

References

Chapter 5 Microlithography in Semiconductor Device Processing

I. Introduction

II. Pattern Generation

III. Photomask Fabrication

IV. Wafer Resist Patterning

V. Summary and Conclusions

References

Chapter 6 Formation and Characterization of Transition-Metal Silicides

I. Introduction

II. Formation and Characterization

III. Silicide Transformations

IV. Properties of Silicides

Appendix. Silicide Tables

References

Chapter 7 Materials Characterization for Ion Implantation

I. Introduction

II. Techniques

III. Applications

IV. Summary

References

Chapter 8 Surface Characterization for VLSI

I. Introduction

II. Techniques of Surface Analysis

III. Applications to Process Flow

IV. Future Trends and Needs

References

Chapter 9 Microelectronic Test Chips for VLSI Electronics

I. Historical Perspective

II. Introduction

III. Types of Test Structures

IV. Test-Chip Organization and Test-Structure Design

V. Test-Chip Testers and Advanced Test Structures

VI. Future Directions

Appendix

References

Index

Contents of Other Volumes

Product details

  • Edition: 1
  • Latest edition
  • Volume: 6
  • Published: June 28, 1983
  • Language: English

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