Nanoelectronics: Physics, Materials and Devices
- 1st Edition - January 3, 2023
- Latest edition
- Editors: Angsuman Sarkar, Chandan Kumar Sarkar, Arpan Deyasi, Debashis De, Arezki Benfdila
- Language: English
Nanoelectronics: Physics, Materials and Devices addresses the concepts involved in the exploration of research on nanoscale electronics and photonic devices and their applicati… Read more
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Description
Description
Nanoelectronics: Physics, Materials and Devices addresses the concepts involved in the exploration of research on nanoscale electronics and photonic devices and their application in next-generation integrated circuits (ICs). The book presents a detailed discussion on the field of nanoscale electronic and photonic devices, as well as the most recent techniques for the modeling and simulation of these devices. It provides an in-depth analysis of theoretical frameworks, the fundamental physics underlying device operation, computational modeling, simulation methods, and circuit applications of nanoscale devices. The purpose of this book is to provide a desirable balance between basic background and concepts to improve device performance.
In this book, both qualitative and quantitative approaches are considered to analyze and explore the contributions made by various researchers actively engaged in nanoscale device research. The book's main motivation is to help solve the challenges of analyzing and exploring the electrical behaviors of contemporary nanoscale device technologies. It purposefully builds the principles of nano electronic devices gradually, invigorating those of micro electronic devices.
Key features
Key features
- Addresses the conceptual, architectural, and design challenges faced by emerging nanoscale devices as a replacement of conventional MOSFET
- Serves as a guide to researchers by suggesting research directions and potential applications
- Explains the use of Technology Computer-Aided Design software (TCAD) to produce numerical simulations of nanoscale devices
Readership
Readership
Materials Scientists and engineers
Table of contents
Table of contents
Chapter 1. Basics Concepts of Device Physics
a. Basics of semiconductor physics
b. p-n junction
c. Basics of carrier transport
d. Introduction to field effect transistors & MOS capacitors
e. Introduction to CMOS technology
f. Quantum mechanics and 2DEG
g. Quantum confinement, fermi level pinning & discrete DOS
h. Ballistic transport
Chapter 2. Scaling the MOSFET: Detrimental Short Channel Effects
Chapter 3. Alternate Device Architectures to Mitigate Challenges
a. Silicon on insulator (SOI) and silicon on nothing concepts
b. Non-uniform doping and pocket engineering, halo doping & reverse SCEs
c. Gate material engineering: Dual material gate (DMG), triple material gate (TMG)
d. Use of high-K dielectric to reduce gate tunneling
e. Underlap and spacer engineering
Chapter 4. Emerging FET Architectures
a. Evolution of multiple gate MOSFET structure
b. Cylindrical gate MOSFET and vertical channel MOSFET
c. Ultra-thin body concept and UTB SOI MOSFET
d. Recent trends in FinFET
e. Junction-less field effect transistors
f. Importance of steep subthreshold slope devices: impact ionization FET (I-MOSFET) and tunnel FET (TFET)
Chapter 5. Alternate Device Materials to Mitigate Challenges
a. III-V heterostrucutre FET (HFET)
b. New high-mobility channels
c. Graphene and carbon nanotube-based materials
d. Ballistic transport based nanodevices: CNTFET, GNRFET & NWFET
Chapter 6. End of the Road Map: Quest for Beyond Si CMOS Era
a. The last decade of Moore’s law
b. Quest for beyond Si CMOS era: More Moore
c. More than Moore: SoC and SoP concepts
d. Extending CMOS: Beyond CMOS technologies
Chapter 7. Low-dimensional Devices:
a. Low-dimensional semiconductors: Growth & applications
b. Inclusion of quantum effect in nanodevices: quantum devices
c. Quantum effect in nanoscale electronic and optoelectronic devices
d. Recent trends in HEMT
e. Computational modeling at the nanoscale;
f. Fundamentals and applications of nanotubes, nanowires, quantum dots, and other low-dimensional materials;
Chapter 8. Devices with New Material Systems:
a. 2D novel material-based devices: TMDCs and other 2D materials
b. Organic electronics
c. Flexible and wearable electronics
d. Paper electronics
e. Novel optoelectronic devices
f. Nanocomposites in future nano electronic information storage devices
Chapter 9. Emerging Non-CMOS Devices & Technologies
a. Electrostatic-based electrical quantum-dot cellular automata (EQCA)
b. Tunnel-based nanodevices: tunnel FETs, single electron transistors (SET) and resonant tunneling diodes (RTD)
c. Magnetostatic-based magnetic quantum-dot cellular automata (MQCA)
d. Conductive polymer-based devices: CMOS-nanowire-molecular (CMOL) structure
e. Electric dipole-based devices: Negative capacitance FETs
f. Spin-based device and orbital-state-based devices: BisFET
g. Nano-electro-mechanical switches, devices and systems
Chapter 10. Sensors & Display Technologies
a. Optical, chemical, or biological sensors
b. MEMS devices and Thin films for sensor application
c. TFTs: Organic and flexible substrate electronics
Chapter 11. Application of Nanoscale Devices in Circuits
a. Application of nanoscale devices as biosensors
b. Ultra-scale CMOS and memory technologies
c. Circuit application of nanoscale devices
d. Analog/RF applications of emerging nanoscale devices
e. MOSFET design and its optimization for low-power applications
f. Low-power memory design for IoT enabled systems
Chapter 12. Analytical Modeling of Nanoscale Devices
Chapter 13. TCAD Simulation of Emerging Nanoscale Devices
Chapter 14. Photonic Integrated Circuits
Chapter 15. Advanced Materials and their Uses for Intelligent Devices
a. Smart sensors for renewable applications
b. Energy storage devices
c. Low-power energy harvesters
d. IoT enabled energy systems
a. Basics of semiconductor physics
b. p-n junction
c. Basics of carrier transport
d. Introduction to field effect transistors & MOS capacitors
e. Introduction to CMOS technology
f. Quantum mechanics and 2DEG
g. Quantum confinement, fermi level pinning & discrete DOS
h. Ballistic transport
Chapter 2. Scaling the MOSFET: Detrimental Short Channel Effects
Chapter 3. Alternate Device Architectures to Mitigate Challenges
a. Silicon on insulator (SOI) and silicon on nothing concepts
b. Non-uniform doping and pocket engineering, halo doping & reverse SCEs
c. Gate material engineering: Dual material gate (DMG), triple material gate (TMG)
d. Use of high-K dielectric to reduce gate tunneling
e. Underlap and spacer engineering
Chapter 4. Emerging FET Architectures
a. Evolution of multiple gate MOSFET structure
b. Cylindrical gate MOSFET and vertical channel MOSFET
c. Ultra-thin body concept and UTB SOI MOSFET
d. Recent trends in FinFET
e. Junction-less field effect transistors
f. Importance of steep subthreshold slope devices: impact ionization FET (I-MOSFET) and tunnel FET (TFET)
Chapter 5. Alternate Device Materials to Mitigate Challenges
a. III-V heterostrucutre FET (HFET)
b. New high-mobility channels
c. Graphene and carbon nanotube-based materials
d. Ballistic transport based nanodevices: CNTFET, GNRFET & NWFET
Chapter 6. End of the Road Map: Quest for Beyond Si CMOS Era
a. The last decade of Moore’s law
b. Quest for beyond Si CMOS era: More Moore
c. More than Moore: SoC and SoP concepts
d. Extending CMOS: Beyond CMOS technologies
Chapter 7. Low-dimensional Devices:
a. Low-dimensional semiconductors: Growth & applications
b. Inclusion of quantum effect in nanodevices: quantum devices
c. Quantum effect in nanoscale electronic and optoelectronic devices
d. Recent trends in HEMT
e. Computational modeling at the nanoscale;
f. Fundamentals and applications of nanotubes, nanowires, quantum dots, and other low-dimensional materials;
Chapter 8. Devices with New Material Systems:
a. 2D novel material-based devices: TMDCs and other 2D materials
b. Organic electronics
c. Flexible and wearable electronics
d. Paper electronics
e. Novel optoelectronic devices
f. Nanocomposites in future nano electronic information storage devices
Chapter 9. Emerging Non-CMOS Devices & Technologies
a. Electrostatic-based electrical quantum-dot cellular automata (EQCA)
b. Tunnel-based nanodevices: tunnel FETs, single electron transistors (SET) and resonant tunneling diodes (RTD)
c. Magnetostatic-based magnetic quantum-dot cellular automata (MQCA)
d. Conductive polymer-based devices: CMOS-nanowire-molecular (CMOL) structure
e. Electric dipole-based devices: Negative capacitance FETs
f. Spin-based device and orbital-state-based devices: BisFET
g. Nano-electro-mechanical switches, devices and systems
Chapter 10. Sensors & Display Technologies
a. Optical, chemical, or biological sensors
b. MEMS devices and Thin films for sensor application
c. TFTs: Organic and flexible substrate electronics
Chapter 11. Application of Nanoscale Devices in Circuits
a. Application of nanoscale devices as biosensors
b. Ultra-scale CMOS and memory technologies
c. Circuit application of nanoscale devices
d. Analog/RF applications of emerging nanoscale devices
e. MOSFET design and its optimization for low-power applications
f. Low-power memory design for IoT enabled systems
Chapter 12. Analytical Modeling of Nanoscale Devices
Chapter 13. TCAD Simulation of Emerging Nanoscale Devices
Chapter 14. Photonic Integrated Circuits
Chapter 15. Advanced Materials and their Uses for Intelligent Devices
a. Smart sensors for renewable applications
b. Energy storage devices
c. Low-power energy harvesters
d. IoT enabled energy systems
Product details
Product details
- Edition: 1
- Latest edition
- Published: January 10, 2023
- Language: English
About the editors
About the editors
AS
Angsuman Sarkar
Dr Angsuman Sarkar is currently serving as a Professor of Electronics and Communication Engineering in Kalyani Government Engineering College, West Bengal, India. His current research interest extends around the study of short channel effects of sub 100 nm MOSFETs and nanodevice modelling.
Affiliations and expertise
Professor, Kalyani Government Engineering College, Kalyani, West Bengal, IndiaCS
Chandan Kumar Sarkar
Chandan Kumar Sarkar is Professor in the Department of Electronics & Tele-communication Engineering, Jadavpur University, Kolkata, India. His research area is in electron transport in semiconductors & alloys, quantum transport in low-dimensional systems, MOS device physics, thin film and related devices, microwave & MM wave devices & systems, nano-crystal embedded flash memory design, and RF CMOS.
Affiliations and expertise
Professor, Department of Electronics and Tele-communication Engineering, Jadavpur University, Kolkata, West Bengal, IndiaAD
Arpan Deyasi
Arpan Deyasi is an Assistant Professor in the Department of Electronics and Communication Engineering in the RCC Institute of Information Technology, Kolkata, India. He has more than 15 years of professional experience in academia and industry. His area of research is in semiconductor nanostructure and semiconductor photonics.
Affiliations and expertise
Assistant Professor, Department of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata, IndiaDD
Debashis De
Debashis De is a professor at MAKAUT, WB, India. He is a senior member-IEEE, fellow IETE, and life member CSI. He was awarded the prestigious Boyscast Fellowship by the Department of Science and Technology, India, to work at the Heriot-Watt University, Scotland, UK. He received the Endeavour Fellowship Award from DEST Australia to work at the University of Western Australia and received the Young Scientist twice in New Delhi and in Istanbul, Turkey, from the International Union of Radio Science, Belgium. He established the Center of Mobile cloud computing (CMCC) for IoT applications, and is vice-chair of Dew Computing STC of IEEE Computer Society. Dr. De has published in 320 journals and 200 conference papers, 15 books, and filed ten patents. His research interests are in edge AI, IoT, and quantum computing.
Affiliations and expertise
Professor, Dept. of Computer Science and Engineering, Maulana Abul Kalam Azad University of Technology, Kolkata, IndiaAB
Arezki Benfdila
Arezki Benfdila is Professor and Research Director at the Mouloud Mammeri University, Tizi-Ouzou Algeria. His research interests lie in microelectronics engineering.
Affiliations and expertise
Professor and Research Director, Mouloud Mammeri University, Tizi-Ouzou, Tizi Ouzou, AlgeriaView book on ScienceDirect
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