Physics of Thin Films

Contents

Contributors to Volume 13 v

Preface

Editors' Note

Ionized Cluster Beam Deposition and Epitaxy

I. Introduction

II. Equipment for Ionized Cluster Beam Deposition and Epitaxy

III. Film-Formation Mechanism

IV. Film Deposition and Epitaxial Growth

V. Conclusions

References

The Activated Reactive Evaporation Process

I. Introduction

II. Processes for the Deposition of Refractory Compounds

III. Direct Evaporation

IV. Reactive Evaporation Processes

V. Activated Reactive Evaporation and the Role of Plasma

VI. Implementation of the Activated Reactive Evaporation Process

VII. Compounds Synthesized by the ARE Process and the Effect of Process Variables

VIII. Microstructure, Preferred Orientation, and Mechanical Properties of Refractory Compound Deposits

IX. Applications of the ARE Process

X. Summary

References

Ion-Beam Processing of Optical Thin Films

I. Introduction

II. Ion Sources

III. Ion-Surface Interactions

IV. Film Properties and Analysis Method

V. Substrate Bombardment

VI. Postdeposition Bombardment

VII. Ion-Beam Deposition of Optical Films

VIII. Conclusion

References

Laser-Induced Etching

I. Introduction

II. Mechanisms of Laser-Induced Etching

III. Methods of Laser-Induced Etching

IV. Applications of Laser-Induced Etching

V. Concluding Remarks

References

Contacts to GaAs Devices

I. Introduction

II. "Ideal" Contacts

III. The GaAs Surface and InterfaceFermi-Level Pinning

IV. Alloyed Ohmic Contacts to GaAs

V. Heterojunction Contacts

VI. Recent Results

VII. Summary

References

Author Index

Subject Index