SiC Materials and Devices
- 1st Edition, Volume 52 - May 27, 1998
- Latest edition
- Editors: R. K. Willardson, Eicke R. Weber
- Language: English
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of… Read more
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Description
Description
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Readership
Readership
AUDIENCE: Researchers, graduate students, and practitioners in materials science (electronic materials field) and electrical engineering (field of electronic devices).
Table of contents
Table of contents
K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur, SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based Heterostructures and Devices. Subject Index.
Product details
Product details
- Edition: 1
- Latest edition
- Volume: 52
- Published: August 4, 2011
- Language: English
About the editors
About the editors
RW
R. K. Willardson
Affiliations and expertise
WILLARDSON CONSULTING SPOKANE, WASHINGTONEW
Eicke R. Weber
Affiliations and expertise
Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, GermanyView book on ScienceDirect
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