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Elsevier

Books in Physics

Physics titles offer comprehensive research and advancements across the fundamental and applied areas of physical science. From quantum mechanics and particle physics to astrophysics and materials science, these titles drive innovation and deepen understanding of the principles governing the universe. Essential for researchers, educators, and students, this collection supports scientific progress and practical applications across a diverse range of physics disciplines.

  • Random Processes: Measurement, Analysis and Simulation

    • 1st Edition
    • J. Cacko + 2 more
    • English
    This book covers the basic topics associated with the measurement, analysis and simulation of random environmental processes which are encountered in practice when dealing with the dynamics, fatigue and reliability of structures in real environmental conditions. The treatment is self-contained and the authors have brought together and integrated the most important information relevant to this topic in order that the newcomer can see and study it as a whole. This approach should also be of interest to experienced engineers from fatigue laboratories who want to learn more about the possible methods of simulation, especially for use in real time on electrohydraulic computer-controlled loading machines.Problems of constructing a measuring system are dealt with in the first chapter. Here the authors discuss the choice of measuring conditions and locations, as well as the organization of a chain of devices for measuring and recording random environmental processes. Some experience gained from practical measurements is also presented. The recorded processes are further analysed by various methods. The choice is governed by the aims of the measurements and applications of the results. Chapter 2 is thus devoted to methods of random process evaluations for digital computers, both from the fatigue and dynamic point of view. The most important chapter is Chapter 3 as this presents a review of up-to-date methods of random process simulation with given statistical characteristics. These methods naturally follow those of random process analysis, and their results form initial data for the corresponding simulations algorithms, including occurrences of characteristic parameters of counting methods, reproduction of correlation theory characteristics and of autoregressive models. The simulation of non-stationary processes is treated in depth, taking into account their importance for practical applications and also the lack of information of this subject.The book is intended to help resolve many practical problems concerning the methods and quality of environmental process evaluation and simulation which can arise when up-to-date loading systems with computer control are being used in material, component and structural fatigue and dynamic research.

  • Silicon Molecular Beam Epitaxy

    • 1st Edition
    • Volume 10A
    • Erwin Kasper + 1 more
    • English
    This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

  • Nuclear Structure 1985

    • 1st Edition
    • R.A. Broglia + 2 more
    • English
    40 leading specialists review the modern developments of nuclearstructure physics.

  • Few body dynamics

    • 1st Edition
    • Asoke Mitra
    • English
    Few Body Dynamics presents the proceedings of the VII International Conference on Few Body Problems in Nuclear and Particle Physics, held in Delhi from December 29, 1975 to January 3, 1976. Invited speakers talked about topics ranging from dynamic equations and approximation methods to computation and experimental techniques, few body bound states, breakup reactions and polarization, few electron systems, and photon and electron probes on few body systems. Speakers also covered few body reactions with mesons and resonances, few body aspects of nuclear reactions and scattering, three body forces in nuclei, and quark physics. Comprised of four parts encompassing 145 chapters, this volume summarizes the status and results from experimental facilities such as the Bhabha Atomic Research Centre in India, TRIUMF in Canada, and the Clinton P. Anderson Meson Physics Facility in the United States. It also discusses completeness relations in scattering theory for non-Hermitian potentials, ambiguities in phase-shift analysis, and parametrization of the half-shell function when the eigenchannel has a bound state. The next chapters focus on possible phenomenological forms for the two-body local potential, nuclear three-body forces arising from triple-boson couplings, and concepts such as N-particle transit operators, three-body separable expansion amplitude, the three-body problem with energy-dependent potentials, and the four-body problem. The book also introduces the reader to triton with realistic potentials, backward proton-deuteron scattering, and deep inelastic lepton-nucleon interactions at high energy. This book will benefit physicists, students, and researchers who want to learn about the dynamics of few body systems.

  • Introduction to Solid State Electronics

    • 2nd Edition
    • F.F.Y. Wang
    • English
    This textbook is specifically tailored for undergraduate engineering courses offered in the junior year, providing a thorough understanding of solid state electronics without relying on the prerequisites of quantum mechanics. In contrast to most solid state electronics texts currently available, with their generalized treatments of the same topics, this is the first text to focus exclusively and in meaningful detail on introductory material. The original text has already been in use for 10 years. In this new edition, additional problems have been added at the end of most chapters. These problems are meant not only to review the material covered in the chapter, but also to introduce some aspects not covered in the text.An amended Solutions Manual is in preparation.

  • Gauge Theory and Defects in Solids

    • 1st Edition
    • D.G.B. Edelen + 1 more
    • English
    This new series Mechanics and Physics of Discrete Systems aims to provide a coherent picture of the modern development of discrete physical systems. Each volume will offer an orderly perspective of disciplines such as molecular dynamics, crystal mechanics and/or physics, dislocation, etc. Emphasized in particular are the fundamentals of mechanics and physics that play an essential role in engineering applications.Volume 1, Gauge Theory and Defects in Solids, presents a detailed development of a rational theory of the dynamics of defects and damage in solids. Solutions to field equations are used to determine stresses, dislocation densities and currents that arise from histories of loading of boundaries of bodies. Analysed in detail is a gauge theory with a gauge group that is not semi-simple, and whose action occurs at the classical macroscopic level. Yang-Mills theory is applied where the state variables are elastic displacements in solids, determination of mechanical and electromagnetic observables by choice of gauge conditions is demonstrated, and practices of classical dislocation theory are derived from first principles.

  • Carrier Scattering in Metals and Semiconductors

    • 1st Edition
    • Volume 19
    • V.F. Gantmakher + 1 more
    • English
    The transport properties of solids, as well as the many optical phenomena in them are determined by the scattering of current carriers. ``Carrier Scattering in Metals and Semiconductors'' elucidates the state of the art in the research on the scattering mechanisms for current carriers in metals and semiconductors and describes experiments in which these mechanisms are most dramatically manifested.The selection and organization of the material is in a form to prepare the reader to reason independently and to deal just as independently with available theoretical results and experimental data. The subjects dealt with include: - electronic transport theory based on the test-particle and correlation-function concepts; - scattering by phonons, impurities, surfaces, magnons, dislocations, electron-electron scattering and electron temperature; - two-phonon scattering, spin-flip scattering, scattering in degenerate and many-band models.

  • Surface Polaritons

    • 1st Edition
    • Volume 1
    • V. M. Agranovich
    • English
    Modern Problems in Condensed Matter Sciences, Volume I: Surface Polaritons: Electromagnetic Waves at Surfaces and Interfaces describes the basic properties of surface polaritons and the methods of generating these waves in the laboratory at frequencies of interest to condensed matter physicists. The selection first elaborates on surface phonon polaritons in dielectrics and semiconductors and surface exciton polaritons from the experimental viewpoint. Discussions focus on interface polaritons; surface vibrations in anisotropic crystals; experimental methods for the excitation and study of surface polaritons; and surface vibrations in isotropic crystals. The publication then ponders on surface electromagnetic wave propagation on metal surfaces; thermally stimulated emission of surface polaritons; and effects of the transition layer and spatial dispersion in the spectra of surface polaritons. The text takes a look at surface polaritons at metal surfaces and interfaces and resonance of transition layer excitations with surface polaritons. Topics include resonance of the film phonon with the substrate surface phonon polaritons; investigations of surface modifications in ultra-high vacuum; and use of surface plasma waves for the investigation of solid-liquid and solid-solid interfaces. The selection is a dependable reference for physicists and engineers wanting to conduct research on surface polaritons.

  • Nonlinear Phenomena in Complex Systems

    • 1st Edition
    • A.N. Proto
    • English
    This book contains a thorough treatment of neural networks, cellular-automata and synergetics, in an attempt to provide three different approaches to nonlinear phenomena in complex systems. These topics are of major interest to physicists active in the fields of statistical mechanics and dynamical systems. They have been developed with a high degree of sophistication and include the refinements necessary to work with the complexity of real systems as well as the more recent research developments in these areas.

  • String Theory in Four Dimensions

    • 1st Edition
    • Volume 1
    • M. Dine
    • English
    ``String Theory in Four Dimensions'' contains a representative collection of papers dealing with various aspects of string phenomenology, including compactifications on smooth manifolds and more general conformal field theories. Together with the lucid introduction by M. Dine, this material gives the reader a good working knowledge of our present ideas for connecting string theory to nature.

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