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Surface and Interface Effects in VLSI

  • 1st Edition, Volume 10 - May 8, 1985
  • Latest edition
  • Editors: Norman G. Einspruch, Robert S. Bauer
  • Language: English

VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they… Read more

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Description

VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.

Table of contents


List of Contributors

Preface

Part A Introduction

Chapter 1 Interfaces and Devices

I. Introduction

II. Electrical Properties of Interfaces

III. Structure of Interfaces

IV. Reproducibility and Stability

V. Summary and Prognosis

References

Part B Structure

Chapter 2 Characterization of the Si - SiO2 Interface

I. Introduction

II. Historical Background

III. Oxidation and Diffusion

IV. Interface Morphology

V. Interface Traps

VI. Theoretical Models

VII. Conclusions

References

Chapter 3 Fundamental Studies of Interfaces: The Unified Defect Model and Its Application to GaAs Integrated Circuits

I. Introduction

II. New Experimental Techniques to Study Surfaces and Interfaces on an Atomic Scale: Synchrotron Radiation

III. Strategy Used in This Work

IV. The Unified Defect Model for III-V Interfaces and Its Origin

V. III-V Ternary and Quaternary Alloys

VI. Scientifically Engineered Schottky Barrier Heights

VII. Ohmic Contacts

VIII. Chemistry and Intermixing at III-V Semiconductor-Metal Interfaces

IX. Other Applications to VLSI Devices

X. Summary and Conclusions

References

Part C Electronic Properties

Chapter 4 Heterostructure Device Physics: Band Discontinuities as Device Design Parameters

I. Introduction: Why Heterostructures?

II. Band Offsets

III. Band Bending and Space Charge Layers at Abrupt Heterojunctions

IV. The High Electron Mobility Transistor (HEMT): A Device Example

References

Chapter 5 Interface Constraints on MESFET and MISFET Architectures

I. Introduction

II. Models for FET

III. Surfaces and Interfaces

IV. Metal-Semiconductor Interfaces

V. Chemical Reactions Between Metals and III-V Compounds

VI. The GaAs Schottky Barrier

VII. Channel-Substrate Interface

VIII. Ohmic Contacts

IX. Dielectric III-V Compound Semiconductor Interfaces

X. Surface and Interfacial Properties of Ternary and Quaternary III-V Alloys

XI. Instabilities in MISFET

XII. Afterthoughts

References

Chapter 6 The Role of Boundary Conditions to Near-and Submicrometer-Length Gallium Arsenide Structures

I. Introduction

II. Transport through Moment of the Boltzmann Transport Equation

III. Solution of the Governing Equations

IV. Conclusions

References

Appendix. Dimensionless Equations Used in the Numerical Simulations

Chapter 7 Carrier Transport at the Si - SiO2 Interface

List of Symbols

I. Introduction

II. Scaling

III. Carrier Velocity Measurements

IV. A Model for Electron Velocity in Silicon

V. Charge Packet Transport and Broadening

References

Index

Contents of Other Volumes

Product details

  • Edition: 1
  • Latest edition
  • Volume: 10
  • Published: September 25, 2014
  • Language: English

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