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Switchmode RF and Microwave Power Amplifiers

  • 3rd Edition - March 19, 2021
  • Latest edition
  • Authors: Andrei Grebennikov, Marc J. Franco
  • Language: English

Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretic… Read more

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Description

Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies.

This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings.

Key features

  • Provides a complete history of high-efficiency Class E and Class F techniques
  • Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths
  • Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs
  • Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques
  • Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations

Readership

RF/wireless and microwave engineers and designers; university researchers, graduate students

Table of contents

PrefaceDedication to N. Sokal1. Power amplifier design principles1.1. Spectral-domain analysis1.2. Basic classes of operation: A, AB, B, C1.3. Load line and output impedance1.4. Classes of operation based upon finite number of harmonics1.5. Active device models1.5.1. MOSFET device modeling1.5.2. LDMOSFETs1.5.3. GaAs MESFETs and GaN HEMTs1.5.4. Low- and high-voltage HBTs 1.6. High-frequency conduction angle1.7. Nonlinear effect of collector capacitance1.8. Push-pull power amplifiers1.9. Power gain and impedance matching1.10. Load-pull characterization1.11. Amplifier stability1.12. Parametric oscillations1.13. Bias circuits1.14. Distortion fundamentals1.14.1. Linearity1.14.2. Time variance1.14.3. Memory1.14.4. Distortion of electrical signals1.14.5. Types of distortion1.14.6. Nonlinear distortion analysis for sinusoidal signals measures of nonlinearity distortionReferences2. Class-D power amplifiers2.1. Switchmode power amplifiers with resistive load2.2. Complementary voltage-switching configuration2.3. Transformer-coupled voltage-switching configuration2.4. Transformer-coupled current-switching configuration2.5. Symmetrical current-switching configuration2.6. Voltage-switching configuration with reactive load2.7. Drive and transition time2.8. Practical Class-D power amplifier implementation2.9. Class-D for digital pulse-modulation transmittersReferences3. Class-F power amplifiers3.1. History of Class F techniques3.2. Idealized Class-F mode3.3. Class-F with maximally flat waveforms3.4. Class-F with quarterwave transmission line3.5. Effect of saturation resistance and shunt capacitance3.6. Load networks with lumped elements3.7. Load networks with transmission lines3.8. LDMOSFET power amplifier design examples3.9. Broadband capability of Class-F power amplifiers3.10. Practical Class-F power amplifiers and applicationsReferences4. Inverse Class F4.1. History of inverse Class F techniques4.2. Idealized inverse Class-F mode4.3. Inverse Class-F with quarterwave transmission line4.4. Load networks with lumped elements4.5. Load networks with transmission lines4.6. LDMOSFET power amplifier design example4.7. Examples of practical implementation4.8. Inverse Class-F GaN HEMT power amplifiers for cellular applicationsReferences5. Class E with shunt capacitance and series filter5.1. History of Class E techniques5.2. Load network with shunt capacitor and series filter5.3. Matching with standard load5.4. Effect of saturation resistance5.5. Driving signal and finite switching time5.6. Effect of nonlinear shunt capacitance5.7. Optimum, nominal, and off-nominal Class-E operation5.8. Push-pull operation mode5.9. Load networks with transmission lines5.10. Practical Class-E power amplifiers and applicationsReferences6. Class E with finite dc-feed inductance6.1. Class-E with one capacitor and one inductor6.2. Generalized Class-E load network with finite dc-feed inductance6.3. Sub-harmonic Class E6.4. Parallel-circuit Class E6.5. Even-harmonic Class E6.6. Effect of bondwire inductance6.7. Load network with transmission lines6.8. Operation beyond maximum Class-E frequency6.9. Power gain6.10. CMOS Class-E power amplifiersReferences7. Class E with quarterwave transmission line7.1. Load network with parallel quarterwave line7.2. Optimum load-network parameters7.3. Load network with zero series reactance7.4. Matching circuit with lumped elements7.5. Matching circuit with transmission lines7.6. Load network with series quarterwave line and shunt filter7.7. Design example: 10-W 2.14-GHz Class-E GaN HEMT power amplifierwith parallel quarterwave transmission lineReferences8. Class E with shunt capacitance and shunt filter8.1. Load network with shunt capacitor and shunt filter8.2. Optimum load-network parameters8.3. ADS simulation setup8.4. Load-network with transmission lines8.5. Load network with series reactance8.5.1. Variation of load-network parameters8.5.2. Load network with lumped parameters8.5.3. Load network with transmission linesReferences9. Broadband Class E9.1. Reactance compensation technique9.1.1. Load networks with lumped elements9.1.2. Load networks with transmission lines9.2. Broadband Class E with shunt capacitance9.3. Broadband Class E with shunt filter9.4. Broadband parallel-circuit Class E9.5. High-power RF Class-E power amplifiers9.6. Microwave monolithic Class-E power amplifiers9.7. CMOS Class-E power amplifiersReferences10. Alternative and mixed-mode high-efficiency power amplifiers10.1. Class-DE power amplifier10.2. Class-FE power amplifiers10.3. Class-E/F power amplifiers10.3.1 Symmetrical push-pull configurations10.3.2 Single-ended Class-E/F3 mode10.3.3. Class-E/F3 mode with series tank circuit and shunt filter10.4. High-efficiency mixed-mode broadband power amplifiers10.5. Biharmonic Class-EM power amplifiers10.6. Inverse Class-E power amplifiers10.7. Harmonic tuning using load-pull techniques10.8. Chireix outphasing power amplifiersReferences11. High-efficiency Doherty power amplifiers11.1. Historical aspect and conventional structures11.2. Carrier and peaking amplifiers with harmonic control11.3. Balanced, push-pull, and dual Doherty amplifiers11.4. Asymmetric Doherty amplifiers11.5. Multistage Doherty amplifiers11.6. Inverted Doherty amplifiers11.7. Integrated and monolithic Doherty amplifiers11.8. Digitally driven Doherty amplifier11.9. Multiband and broadband capability11.9.1. Multiband Doherty configurations11.9.2. Broadband Doherty amplifier via real frequency technique11.9.3. Bandwidth extension using reactance compensation technique11.9.4. Broadband parallel Doherty architecture11.9.5. Broadband inverted Doherty amplifiersReferences12. Predistortion linearization techniques12.1. Modeling of RF power amplifiers with memory12.2. Predistortion linearization12.2.1. Introduction12.2.2. Memoryless predistorter for octave-bandwidth amplifiers12.2.3. Predistorter with memory for octave-bandwidth amplifiers12.2.4. Postdistortion12.3. Analog predistortion implementation12.3.1. Introduction12.3.2. Reflective predistorters12.3.3. Transmissive predistorters12.4. Digital predistortion implementation12.4.1. Introduction12.4.2. Principles of memoryless digital predistortion12.4.3. Digital predistortion adaptation12.4.4. Digital predistorter performanceReferences13. Computer-aided design of switchmode power amplifiers13.1. HB-PLUS program for half-bridge and full-bridge direct-coupled voltage-switching Class-D and Class-DE circuits13.2. HEPA-PLUS CAD program for Class E13.3. Effect of Class-E load-network parameter variations13.4. HB-PLUS CAD examples for Class D and Class DE13.5. HEPA-PLUS CAD example for Class E13.6. Class-E power amplifier design using SPICE13.7. ADS circuit simulator and its applicability to switchmode Class E13.8. ADS CAD design example: high-efficiency two-stage 1.75-GHz MMIC HBT power amplifierReferences

Product details

  • Edition: 3
  • Latest edition
  • Published: March 26, 2021
  • Language: English

About the authors

AG

Andrei Grebennikov

Dr. Andrei Grebennikov is a Senior Member of the IEEE and a Member of Editorial Board of the International Journal of RF and Microwave Computer-Aided Engineering. He received his Dipl. Ing. degree in radio electronics from the Moscow Institute of Physics and Technology and Ph.D. degree in radio engineering from the Moscow Technical University of Communications and Informatics in 1980 and 1991, respectively.

He has obtained a long-term academic and industrial experience working with the Moscow Technical University of Communications and Informatics, Russia, Institute of Microelectronics, Singapore, M/A-COM, Ireland, Infineon Technologies, Germany/Austria, and Bell Labs, Alcatel-Lucent, Ireland, as an engineer, researcher, lecturer, and educator.

He lectured as a Guest Professor in the University of Linz, Austria, and presented short courses and tutorials as an Invited Speaker at the International Microwave Symposium, European and Asia-Pacific Microwave Conferences, Institute of Microelectronics, Singapore, and Motorola Design Centre, Malaysia. He is an author or co-author of more than 80 technical papers, 5 books, and 15 European and US patents.

Affiliations and expertise
Bell Labs, Alcatel-Lucent, Ireland

MF

Marc J. Franco

Marc J. Franco holds a Ph.D. degree in electrical engineering from Drexel University, Philadelphia. He is currently with RFMD, Technology Platforms, Component Advanced Development, Greensboro, North Carolina, USA, where he is involved with the design of advanced RF integrated circuits and integrated front-end modules. He was previously with Linearizer Technology, Inc. Hamilton, New Jersey, where he led the development of advanced RF products for commercial, military and space applications.

Dr. Franco is a regular reviewer for the Radio & Wireless Symposium, the European Microwave Conference and the MTT International Microwave Symposium. He is a member of the MTT-17 HF-VHF-UHF Technology Technical Coordination Committee and has co-chaired the IEEE Topical Conference on Power Amplifiers for Radio and Wireless Applications. He is a Senior Member of the IEEE.

His current research interests include high-efficiency RF power amplifiers, nonlinear distortion correction, and electromagnetic analysis of structures.

Affiliations and expertise
RFMD, Greensboro, NC, USA

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